Consider a situation in which reverse biased current of a particular P-N

Question:

Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength $\leq 621 \mathrm{~nm}$.

During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

  1. $2 \mathrm{eV}$

  2. $4 \mathrm{eV}$

  3. $1 \mathrm{eV}$

  4. $0.5 \mathrm{eV}$


Correct Option: 1

Solution:

Band gap $=\frac{h c}{\lambda_{0}}$

$\lambda_{0} ;$ threshold wavelength

Band gap $=\frac{1242 e \mathrm{ev}-\mathrm{nm}}{621 \mathrm{~nm}}=2 \mathrm{eV}$

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